Nexperia - Experts & Thought Leaders

Nexperia, the pioneer in essential semiconductors announced the release of a new range of 20 V & 30 V MOSFETs in the world’s smallest DFN package, the DFN0603. Nexperia already offers ESD protection devices in this package, but has also succeeded in bringing it to their MOSFET portfolio, a feat as yet unmatched in the industry. Challenges Next-generation wearable and hearable devices are incorporating new levels of artificial intelligence (AI) and machine learning (ML), creating several challenges for product designers. Firstly, available board space is at a premium as functionality is added, plus heat dissipation becomes a problem as power consumption increases. Nexperia has drawn on its decades of experience as an industry pioneer in the production of discrete components and designed this innovative range of tiny MOSFETs to successfully overcome both concerns. Improved efficiency The ultra-low-profile DFN0603 package, measuring only 0.63 x 0.33 x 0.25 mm, uses 13% less space than MOSFETs in the next smallest package (DFN0604). Impressively, this size reduction has been achieved without compromising device performance in fact the RDS(on) of these devices has been reduced by 74%, helping to improve efficiency and thereby enabling wearable equipment designers to achieve even greater power density. This new range of tiny MOSFETs includes: PMX100UN 20 V, N-channel Trench MOSFET PMX100UNE 20 V, N-channel Trench MOSFET with 2kV ESD protection (HBM) PMX300UNE 30 V, N-channel Trench MOSFET PMX400UP 20 V, P-channel Trench MOSFET Nexperia has plans to add two more MOSFETs to this range later in 2022.

Nexperia, the pioneer in essential semiconductors announced an extension to its portfolio of extremely low clamping and ultra-low capacitance ESD protection diodes. This portfolio is designed to protect high-speed data lines such as USB 3.2, HDMI 2.0, LVDS, automotive A/V Monitors, displays, and cameras. Additionally, this portfolio also aims to address the upcoming high-speed video links as well as the OPEN Alliance MGbit ethernet applications. 2-pin and 3-pin single-line devices These latest product additions include PESD5V0C1BLS-Q and PESD5V0C1ULS-Q both as 2-pin single-line devices with a very compact DFN1006BD-2 package for optimized routing flexibility. In addition, PESD5V0C2UM and PESD5V0C2UM-Q are available as 3-pin devices for both differential lines in DFN1006-3. All variants come in leadless packages to improve electrical performance and signal integrity. ESD voltage clamping diodes Nexperia’s ESD protection solutions have allowed these diodes to provide best-in-class signal integrity performance Electrostatic discharge (ESD) voltage clamping diodes perform a vital function by protecting data interfaces in automotive subsystems from damage. However, it is important that they do not degrade data signal integrity or negatively impact the electromagnetic compatibility (EMC) performance of the systems which they protect. Nexperia’s long-standing expertise in the design of ESD protection solutions has allowed these diodes to provide best-in-class signal integrity performance because of their ultra-low device capacitance (as low as 0.3 pF). Automotive qualified devices For maximum design flexibility, these diodes are offered in both dual-line DFN1006-3 and single-line DFN1006BD-2. With the latter packages have side wettable flanks to enable automated optical inspection (AOI). These AEC-Q101 automotive qualified devices exhibit deep snapback behavior combined with a low resistance of 0.27Ω, for improved system level robustness and clamping performance in high-speed data interfaces.

Nexperia, the pioneer in essential semiconductors, has introduced the PMCB60XN and PMCB60XNE 30V N-channel small-signal trench MOSFETs, with RDS(on) in the ultra-compact wafer-level DSN1006 package, to make energy go further where space is tight and battery runtime is critical. Minimize energy losses and increase efficiency Ideal for highly miniaturized electronics like smartphones, smart watches, hearing aids, and earphones, the new MOSFETs support the trend toward greater intelligence and richer functionality that raise system power demand. With RDS(on) up to 25% better than competing devices, they minimize energy losses and increase efficiency in load switching and battery management. Their superior performance also reduces self-heating thereby enhancing user comfort in wearable devices. Lower resistance  PMCB60XN and PMCB60XNE have maximum RDS(on) of 50mΩ and 55mΩ respectively Specifically, the PMCB60XN and PMCB60XNE have maximum RDS(on) of 50mΩ and 55mΩ respectively, at VGS = 4.5V. This gives them the lowest on-resistance per die area among similar 30V MOSFETs in the market. In addition, the PMCB60XNE comes with ESD protection rated to 2kV (human body model – HBM) integrated into the tiny 1.0mm × 0.6mm × 0.2mm DSN1006 outline. Both MOSFETs are rated for drain current up to 4A. Efficiency In addition to these two MOSFETs in DSN1006, Nexperia has also introduced the PMCA14UN, a 12V, N-channel trench MOSFET in a DSN1010 package. With max RDS(on) of 16mΩ at VGS = 4.5 V, the PMCA14UN delivers efficiency in the 0.96mm × 0.96mm × 0.24mm (SOT8007) outline. The 30V PMCB60XN and PMCB60XNE, and 12V PMCA14UN, are in production now and available from Nexperia.